Stable, Step-Guided Growth of Planar Germanium Nanowires at 200 °C via the In-Plane Solid-Liquid-Solid Mechanism.

ABSTRACT: Germanium nanowires (GeNWs) are an ideal 1D platform for advanced nanoelectronics and optoelectronics, offering high carrier mobility, strong quantum confinement effects, and full compatibility with silicon-based complementary metal-oxide-semiconductor (CMOS) technology. However, achieving stable guided growth of planar GeNWs via the in-plane solid-liquid-solid (IPSLS) mechanism has remained challenging due to rapid intermixing between the catalytic droplet and the amorphous germanium (a-Ge) precursor. This study investigates the previously overlooked role of the absorption rate in stabilizing the interface between the indium (In) droplet and the a-Ge layer. A comprehensive analytical growth model elucidates the key dynamic processes governing mass transport and droplet stability during IP

SUBMITTER: An J 

PROVIDER: S-EPMC12850257 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature