K-dependent modulation of intrinsic spin-orbit interaction in MoSe₂ induced by proximity to amorphous Pb.

ABSTRACT: Tuning the strength of spin-orbit interaction (SOI) is pivotal for developing next-generation spintronic and quantum devices. Proximity-induced SOI is a promising route toward this goal, but its experimental characterization with resolution in k-space using ARPES remains challenging. We advance previous ARPES investigations of proximity-induced SOI in graphene-based systems to transition-metal dichalcogenides (MoSe₂) in proximity to an amorphous overlayer of high-Z metal (Pb) whose disordered nature suppresses k-space mismatch at the interface. The use of soft-X-ray ARPES is instrumental for accessing MoSe₂ beneath the Pb layer. We introduce an approach to interpret the experimental data based on the identification of local SOI-derived band gaps-SOI hotspots-where the

SUBMITTER: Alarab F 

PROVIDER: S-EPMC12852670 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature