Metallic tellurium for p-type contacts of two-dimensional MoTe₂ field-effect transistors.

ABSTRACT: While significant progress has been made in the fabrication of n-type contacts for two-dimensional field-effect transistors (2D FETs), the development of high-performance p-type counterparts using compatible techniques remains insufficient to realize competitive complementary circuits. Here, we demonstrate the growth of metallic-phase tellurium (m-Te) on MoTe₂ via evaporation as an efficient p-type contact. The atomic arrangement at the Te/MoTe₂ interface stabilizes m-Te under ambient conditions, forming an atomically sharp van der Waals gap with optimal band alignment and suppressed metal-induced gap states. Combined with hole doping and tellurium vacancies compensation, the interface enables barrier-free hole injection. Bilayer MoTe₂ FETs employing m-Te c

SUBMITTER: Zhu Y 

PROVIDER: S-EPMC12859037 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature