Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy.

ABSTRACT: While high operating temperature infrared photodetection remains a major technological objective, huge improvements have been obtained through the use of increasingly complex semiconductors epitaxies such as quantum cascade structures or III-V superlattice junction. However, the characterization of these layers is challenging and often requires the use of destructive processes. Here, SNOM imaging and spectroscopy on a mechanically cleaved facet is used to characterize the different layers of a complex epitaxial heterostructure composed of a type II superlattice and highly doped semiconductors. These near-field experimental data are compared to simulation in order to retrieve both the cut-off frequency of the superlattice and the doping level of each highly doped semiconductor layers. Addit

SUBMITTER: Tailpied L 

PROVIDER: S-EPMC12862697 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature