Disorder Scattering Induced Large Room Temperature Nonlinear Anomalous Hall Effect in a Semiconductor CdGeAs₂.

ABSTRACT: The nonlinear Hall effect (NLHE) with time-reversal symmetry has emerged as a transformative phenomenon within the Hall effect family, attracting significant interest due to its profound implications for both fundamental physics and technological applications. While prior studies have predominantly focused on NLHE in 2D materials, advancements in practical applications have been constrained by low operating temperatures and limited responsivity, typically below 10^-4 m/V. Achieving significant responsivity at room temperature (RT) in 3D systems has proven challenging, particularly for scattering-induced NLHE. Here, the discovery of disorder scattering-induced NLHE in chalcopyrite-type CdGeAs₂ bulk single crystals is reported, demonstrating a remarkable responsivity of

SUBMITTER: Lee SH 

PROVIDER: S-EPMC12862720 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature