Depth Profiling of Oxygen Migration in Ta/HfO₂ Stacks during Ionic Liquid Gating.

ABSTRACT: Ionic liquid (IL) gating has emerged as a powerful tool to control the structural, electronic, optical, and magnetic properties of materials by driving ion motion at solid interfaces. In magneto-ionic systems, electric fields are used to move ions, typically oxygen, from a donor layer into an underlying magnetic metal. Although oxygen distribution is key to enabling precise and stable control in magneto-ionic systems, the spatial distribution and voltage-dependence of oxygen incorporation in such nanoscale stacks remain unknown. Here, we quantify oxygen depth profiles and oxide formation in Si/SiO₂/Ta(15)/HfO₂(t) films after IL gating as a function of the gate voltage and HfO₂ capping thickness (t = 2 and 3 nm). X-ray reflectivity and X-ray ph

SUBMITTER: Bednarz B 

PROVIDER: S-EPMC12862756 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature