Internal Interfaces in Exfoliated MoS₂ Exhibit Junction-like Behavior.

ABSTRACT: Mechanical exfoliation remains a ubiquitous method for material deposition in van der Waals layered semiconductors, despite usually producing terraced structures where the layer count changes across the flake, resulting in variations in the band gap magnitude across the device. While most published studies circumvent this phenomenon using sophisticated fabrication processes, these internal interfaces present a unique opportunity for the realization of engineered quantum building blocks within single-crystalline materials. The electronic structure of internal interfaces in MoS₂, termed here "quasi-heterojunctions", is studied using a combination of photoluminescence and Raman spectroscopies, Kelvin probe force microscopy, and macroscopic transport measurements. In the transition

SUBMITTER: Russell ESW 

PROVIDER: S-EPMC12862765 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature