Healing Atom Vacancy and Oxidation Suppression in Solution-Processed MoS₂ through Sulfur Vapor Annealing.

ABSTRACT: Sulfur vacancies and interface oxidation are the major challenging issues causing degradation of the structural and electronic properties of molybdenum disulfide (MoS₂). This study demonstrates a sulfur vapor annealing technique to restore sulfur vacancies and suppress oxidation in solution-processed MoS₂ films on Si₃N₄ surfaces. MoS₂ films deposited with precursor concentrations ranging from 5 to 40 mM were annealed at 700 °C under argon (Ar) and sulfur vapor (S-vapor) atmospheres. High-resolution transmission electron microscopy (HRTEM) reveals enhanced crystallinity and a well-ordered layered structure with an interlayer space of ∼0.65 nm in S-vapor-annealed films, compared to disordered and defect structures in Ar-annealed counterp

SUBMITTER: Alam MI 

PROVIDER: S-EPMC12862771 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature