Vertical Self-Rectifying Memristive Arrays for Page-Wise Parallel Logic and Arithmetic Processing.

ABSTRACT: Logic-in-memory (LIM) architectures are explored to address the data transfer bottleneck of conventional von Neumann architectures by integrating computation directly within memory arrays. Among various candidates, memristor-based LIM systems have gained significant attention due to their non-volatile switching behavior and compatibility with dense integration. In this work, a page-wise LIM architecture is implemented using a 3D vertical resistive random-access memory array composed of self-rectifying Pt-Ta₂O₅-Al:HfO₂-TiN memristors. Two logic primitives-1 M and 2 M logic-are employed to perform intra-page and inter-page operations, respectively, enabling core Boolean functions to be executed entirely within the array through resistive state transitions. Ba

SUBMITTER: Son K 

PROVIDER: S-EPMC12878806 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature