Wafer-Bonded AlGaInP Red LEDs with Suppressed S-Droop through Surface Sulfidation.

ABSTRACT: Micro-light-emitting diode (micro-LED) technology enables high pixels-per-inch (PPI) displays using conventional semiconductor processes and relies on extremely miniaturized mesa structures derived from traditional LEDs. Scaling to smaller sizes leads to a significant decrease in emission efficiency because of the stronger influence of sidewall damage. This efficiency degradation, known as the size-effect or S-droop, primarily arises from surface defects introduced by dry etching. These defects promote nonradiative Shockley-Read-Hall (SRH) recombination and create pathways for surface leakage current. In aluminum gallium indium phosphide (AlGaInP) LEDs, chemical passivation with ammonium sulfide is widely used to mitigate sidewall damage. However, the underlying reaction mechanism remains

SUBMITTER: Lee JS 

PROVIDER: S-EPMC12903108 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature