160 GHz Schottky Diodes from Solution-Processed IGZO.

ABSTRACT: Traditional radio frequency (RF) electronics rely on discrete devices, such as diodes, transistors, capacitors, and antennas capable of operating in the GHz frequency domain. Unfortunately, integrating these components to realize large-area RF electronics presents formidable challenges. Herein, we demonstrate wafer-scale, solution-processed indium-gallium-zinc-oxide (IGZO) Schottky diodes with a cut-off frequency exceeding 160 GHz. The diodes feature planar asymmetric self-aligned nanogap electrodes patterned via adhesion lithography (a-Lith) and a flash lamp annealed solution-processed IGZO as the semiconducting layer. An enabling feature of the devices is the Ohmic contact facilitated by an ultra-thin (10 nm) ZnO layer deposited atop the aluminum electrode without increasing the manufact

SUBMITTER: Panagiotidis L 

PROVIDER: S-EPMC12910416 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature