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Annealing and passivation study of germanium on silicon (GOS) mid-infrared waveguide for sensing applications.


ABSTRACT:

SUBMITTER: Ang RCF 

PROVIDER: S-EPMC12917015 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature

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Annealing and passivation study of germanium on silicon (GOS) mid-infrared waveguide for sensing applications.

Ang Rachel C F RCF   Goh Jia Sheng JS   Tobing Landobasa Y M LYM   Lim Leh Woon LW   Tong Amy S K ASK   Fong Andrew W K AWK   Chen Zhixian Z   Ng Doris K T DKT  

Scientific reports 20260202 1


Germanium on silicon (GOS) is an excellent platform for non-dispersive infrared sensing (NDIR) due to its broad mid-infrared (mid-IR) transparency. However, its optical waveguide propagation loss as a photonic sensing medium and its susceptibility to oxidation are concerns to be addressed. Herein, we study the effect of annealing GOS waveguide devices under forming gas and passivation using atomic layer deposition (ALD) of aluminum oxide (Al2O3) and aluminum nitride (AlN) on waveguide loss. Our  ...[more]

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