Intrinsically stretchable 2D MoS₂ transistors.

ABSTRACT: Intrinsically stretchable electronics is rapidly emerging as a transformative platform for next-generation electronics, offering novel form factors and enhanced capabilities. Herein, we report high-performance intrinsically stretchable thin-film transistors based on two-dimensional semiconducting flakes. Our n-type molybdenum disulfide transistors exhibit a maximum field-effect mobility up to 12.5 cm²V^-1s^-1 (average 8 cm²V^-1s^-1) and an on/off current ratio above 10⁷, even under 20% strain, and demonstrate stable performance during cyclic stretching tests. Structural analysis revealed that mechanical strain was accommodated via interflake motions; the flakes are connected by weak van der Waals bonds, enabling effec

SUBMITTER: Kim K 

PROVIDER: S-EPMC12917160 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature