Wafer-Scale All-Dielectric Quasi-BIC Metasurfaces: Bridging High-Throughput Deep-UV Lithography with Nanophotonic Applications.

ABSTRACT: High quality-factor (Q) dielectric metasurfaces operating in the visible to near-infrared range require sub-200 nm features, limiting fabrication to expensive, low-throughput electron beam lithography. Here, we demonstrate wafer-scale metasurfaces fabricated using deep ultraviolet lithography (DUVL), a workhorse technology in the semiconductor industry. Using a radius and depth perturbation technique in a hole array patterned into a silicon nitride slab, we achieve quasi-bound states in the continuum (qBIC) resonances with measured Q-factors of 150. We introduce DUV exposure dose as a Q-factor engineering parameter and demonstrate how hole depth control circumvents DUVL resolution limits. Despite stochastic nanoscale variations, the fabricated metasurfaces exhibit spatial uniformity, a con

SUBMITTER: Beisenova A 

PROVIDER: S-EPMC12922174 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature