Repurposing Si CMOS nonidealities for stochastic and analog image processing.

ABSTRACT: Conventional semiconductor device engineering regards intrinsic device nonidealities as reliability concerns to be minimized or eliminated. Here, we demonstrate the strategic repurposing of these nonidealities as functional resources for advanced stochastic analog computing. We leverage two underutilized phenomena-deep-level channel trap-induced generation-recombination (G-R) noise and impact ionization-induced negative differential resistance (NDR) in body current-which have received limited attention compared to the extensively studied 1/f noise and monotonic drain current behavior in logic-centric transistors. By exploiting G-R noise with controllable temporal correlation and NDR with an unprecedented peak-to-valley ratio (2.78 × 10⁴) within fully depleted silicon-on-i

SUBMITTER: Kwak B 

PROVIDER: S-EPMC12922738 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature