Wafer-scale formation of MoS₂ with controlled thickness and high uniformity via conversion of MoO_x using H₂S sulfurization and subsequent crystallization.

ABSTRACT: Achieving uniform, high-quality, and thickness-controlled two-dimensional semiconductor films at the wafer scale remains a critical challenge for practical device integration. This work presents a scalable synthesis method for MoS₂ films on Si/SiO₂ wafers using a three-step conversion (3SC) process. The process comprises the deposition of an amorphous MoO_x film, low-temperature high-pressure H₂S annealing for sulfurization, and high-temperature Ar annealing to enhance crystallinity. Precise thickness control, from monolayer to ~ 20 nm, is realized by adjusting the initial MoO_x thickness. A higher oxygen content in MoO_x improves sulfurization efficiency and promotes uniform conversion to MoS₂. Structural and optical character

SUBMITTER: Okada N 

PROVIDER: S-EPMC12923741 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature