Dual Bipolar Resistive Switching in Wafer-Scalable 2D Perovskite Oxide Nanosheets-Based Memristor.

ABSTRACT: Memristors based on 2D materials are promising for compact and energy-efficient neuromorphic hardware. However, conventional devices require paired elements to implement bidirectional weight updates, such as spike-timing-dependent plasticity (STDP) and anti-STDP for supervised spiking neural networks (SNN) such as the remote supervised method. Here, an Au/Ti/2D Sr₂Nb₃O₁₀ perovskite-oxide nanosheet (SNO PON)/Pt memristor is demonstrated that exhibits dual bipolar resistive switching, supporting clockwise (interface) and counter-clockwise (filament) switching. Ultrathin (≈5 nm) SNO PONs, fabricated over wafer-scale areas by Langmuir-Blodgett deposition, serve as dynamic reservoirs for oxygen ions and vacancies. Voltage-induced redox reactions at the Ti electr

SUBMITTER: Kim S 

PROVIDER: S-EPMC12931178 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature