One-dimensional photonic crystal nano-ridge surface emitting lasers epitaxially grown on a standard 300 mm silicon wafer.

ABSTRACT: The epitaxial growth of high-quality InGaAs/GaAs nano-ridges on silicon using aspect ratio trapping (ART) and nano-ridge engineering (NRE) has paved the way for the monolithic integration of laser sources on silicon. This breakthrough holds significant potential for integrated silicon photonics, enabling a wide range of applications and opening new research avenues. In this approach, the active material is grown not as a uniform layer but rather as parallel nano-ridge (NR) arrays. Leveraging this intrinsic feature of NRE, we propose a novel approach for realizing a surface-emitting laser and present the first experimental demonstration of this device. The device consists of an array of nano-ridges forming an in-plane cavity that can lase and couple light vertically. Based on an extensive d

SUBMITTER: Fahmy EMB 

PROVIDER: S-EPMC12932861 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature