Quantum Hall effect at 0.002 T in graphene.

ABSTRACT: Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding 107cm2V-1s-1 . Shubnikov-de Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.

SUBMITTER: Mayorov AS 

PROVIDER: S-EPMC12936209 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature