3₁₀-helix conformation facilitates the transition of a voltage sensor S4 segment toward the down state.

ABSTRACT: The activation of voltage-gated ion channels is controlled by the S4 helix, with arginines every third residue. The x-ray structures are believed to reflect an open-inactivated state, and models propose combinations of translation, rotation, and tilt to reach the resting state. Recently, experiments and simulations have independently observed occurrence of 3(10)-helix in S4. This suggests S4 might make a transition from α- to 3(10)-helix in the gating process. Here, we show 3(10)-helix structure between Q1 and R3 in the S4 segment of a voltage sensor appears to facilitate the early stage of the motion toward a down state. We use multiple microsecond-steered molecular simulations to calculate the work required for translating S4 both as α-helix and transformed to 3(10)-helix. The barrier ap

SUBMITTER: Schwaiger CS 

PROVIDER: S-EPMC3059565 | biostudies-literature | 2011 Mar

REPOSITORIES: biostudies-literature