High-k dielectric Al₂O₃ nanowire and nanoplate field effect sensors for improved pH sensing.

ABSTRACT: Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al(2)O(3) gate dielectrics and we compare these devices with FETs with SiO(2) gate dielectrics. The use of a high-k dielectric such as Al(2)O(3) allows for the physical thickness of the gate dielectri

SUBMITTER: Reddy B 

PROVIDER: S-EPMC3190593 | biostudies-literature | 2011 Apr

REPOSITORIES: biostudies-literature