Uniform thin films of CdSe and CdSe(ZnS) core(shell) quantum dots by sol-gel assembly: enabling photoelectrochemical characterization and electronic applications.

ABSTRACT: Optoelectronic properties of quantum dot (QD) films are limited by (1) poor interfacial chemistry and (2) nonradiative recombination due to surface traps. To address these performance issues, sol-gel methods are applied to fabricate thin films of CdSe and core(shell) CdSe(ZnS) QDs. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with chemical analysis confirms that the surface of the QDs in the sol-gel thin films are chalcogen-rich, consistent with an oxidative-induced gelation mechanism in which connectivity is achieved by formation of dichalcogenide covalent linkages between particles. The ligand removal and assembly process is probed by thermogravimetric, spectroscopic, and microscopic studies. Further enhancement of interparticle coupling vi

SUBMITTER: Korala L 

PROVIDER: S-EPMC3590068 | biostudies-literature | 2013 Feb

REPOSITORIES: biostudies-literature