Reversible insulator-metal transition of LaAlO₃/SrTiO₃ interface for nonvolatile memory.

ABSTRACT: We report a new type of memory device based on insulating LaAlO₃/SrTiO₃ (LAO/STO) hetero-interface. The microstructures of the LAO/STO interface are characterized by Cs-corrected scanning transmission electron microscopy, which reveals the element intermixing at the interface. The inhomogeneous element distribution may result in carrier localization, which is responsible for the insulating state. The insulating state of such interface can be converted to metallic state by light illumination and the metallic state maintains after light off due to giant persistent photoconductivity (PPC) effect. The on/off ratio between the PPC and the initial dark conductance is as large as 10⁵. The metallic state also can be converted back to insulating state by applying gate voltage. Reversible and reprod

SUBMITTER: Lu HL 

PROVIDER: S-EPMC3792417 | biostudies-literature | 2013 Oct

REPOSITORIES: biostudies-literature