High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.

ABSTRACT: Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm² V^-1 s^-1. We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm² V^-1 s

SUBMITTER: Banger KK 

PROVIDER: S-EPMC3914394 | biostudies-literature | 2014 Jan

REPOSITORIES: biostudies-literature