Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits.

ABSTRACT: Ultra-large-scale integrated (ULSI) circuits have benefited from successive refinements in device architecture for enormous improvements in speed, power efficiency and areal density. In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. With its simple structure and operational characteristics of low saturation voltage, stability under electrical stress and large intrinsic gain, the SGT is ideally suited for LAE analog applications. Here, we show using measurements on polysilicon devices that these characteristics lead to substantial

SUBMITTER: Sporea RA 

PROVIDER: S-EPMC3944386 | biostudies-literature | 2014 Mar

REPOSITORIES: biostudies-literature