Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits.

ABSTRACT: Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWN

SUBMITTER: Wang H 

PROVIDER: S-EPMC3977307 | biostudies-literature | 2014 Apr

REPOSITORIES: biostudies-literature