Nanocrystalline ZnON; high mobility and low band gap semiconductor material for high performance switch transistor and image sensor application.

ABSTRACT: Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3-10 cm(2)/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm(2)/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material present

SUBMITTER: Lee E 

PROVIDER: S-EPMC4018964 | biostudies-literature | 2014 May

REPOSITORIES: biostudies-literature