Performance enhancement of capacitive-coupling dual-gate ion-sensitive field-effect transistor in ultra-thin-body.

ABSTRACT: Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we here embedded the ultra-thin body (UTB) into the DG ISFET. The UTB of 4.3 nm serves to not only increase its sensitivity, but also to strongly suppress the leakage components, leading to a better stability of the DG ISFET. In addition, we first provide a comprehensive analysis of the body thickness effects especially how the thick body can render the degradation in the device performance, such as sens

SUBMITTER: Jang HJ 

PROVIDER: S-EPMC4055887 | biostudies-literature | 2014 Jun

REPOSITORIES: biostudies-literature