Functionalized graphitic carbon nitride for metal-free, flexible and rewritable nonvolatile memory device via direct laser-writing.

ABSTRACT: Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high

SUBMITTER: Zhao F 

PROVIDER: S-EPMC4115212 | biostudies-literature | 2014 Jul

REPOSITORIES: biostudies-literature