Unconventional transport through graphene on SrTiO₃: a plausible effect of SrTiO₃ phase-transitions.

ABSTRACT: High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO₃ (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO₂/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T = 50 to 100 K accompanied by a decrease in mobility above 30 K. Furthermo

SUBMITTER: Saha S 

PROVIDER: S-EPMC4141260 | biostudies-literature | 2014 Aug

REPOSITORIES: biostudies-literature