Gigahertz single-trap electron pumps in silicon.

ABSTRACT: Manipulation of single electrons is the key to developing ultimate electronics such as single-electron-based information processors and electrical standards in metrology. Especially, high-frequency and high-accuracy single-electron pumps are essential to realize practical current standards. While electrically defined quantum dots are widely used to build single-electron pumps, a localized state in semiconductors is also a potential candidate for accurate pumps because it can have a large activation energy for the captured electron. However, the transfer mechanism of such localized-state-mediated single-electron pumps for high-accuracy operation at a high frequency has not been well examined. Here we demonstrate a single-electron pump using a single-trap level with an activation energy of a

SUBMITTER: Yamahata G 

PROVIDER: S-EPMC4205845 | biostudies-literature | 2014 Oct

REPOSITORIES: biostudies-literature