One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application.

ABSTRACT: In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [Formula: see text] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm(2)V(-1) s(-1) and hole concentration of 1.34 × 10(18) cm(-3), respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible

SUBMITTER: Luo LB 

PROVIDER: S-EPMC4256975 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature