Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.

ABSTRACT: The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. As such, it is receiving additional focus to accelerate the commercialization process. To create a successful mass product, reliability issues must first be rigorously solved. In-depth understanding of the failure behavior of the ECM is essential for performance optimization. Here, we reveal the degradation of high resistance state behaves as the majority cases of the endurance failure of the HfO2 electrolyte based ECM cell. High resolution transmission electron microscopy was used to characterize the change in filament nature after repetitive switching cycles. The result showed that

SUBMITTER: Lv H 

PROVIDER: S-EPMC4293596 | biostudies-literature | 2015 Jan

REPOSITORIES: biostudies-literature