Heterovalent substitution to Enrich electrical conductivity in Cu2CdSn(1-x)GaxSe4 series for high thermoelectric performances.

ABSTRACT: Serials of Ga doping on Sn sites as heterovalent substitution in Cu2CdSnSe4 are prepared by the melting method and the spark plasma sintering (SPS) technique to form Cu2CdSn(1-x)GaxSe4 (x = 0, 0.025, 0.05, 0.075, 0.01, and 0.125). Massive atomic vacancies are found at x = 0.10 by the heterovalent substitution, which contributes significantly to the increase of electrical conductivity and the decrease of lattice thermal conductivity. The electrical conductivity is increased by about ten times at 300 K after Ga doping. Moreover, the seebeck coefficient only decreases slightly from 310 to 226 μV/K at 723 K, and a significant increase of the power factor is obtained. As a result, a maximum value of 0.27 for the figure of merit (ZT) is obtained at x = 0.10 and at 723 K. Through an ab initio stu

SUBMITTER: Wang B 

PROVIDER: S-EPMC4366858 | biostudies-literature | 2015 Mar

REPOSITORIES: biostudies-literature