In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors.

ABSTRACT: The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO₂ channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes p

SUBMITTER: Lassnig R 

PROVIDER: S-EPMC4371883 | biostudies-literature | 2014 Sep

REPOSITORIES: biostudies-literature