Comparing graphene growth on Cu(111) versus oxidized Cu(111).

ABSTRACT: The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory

SUBMITTER: Gottardi S 

PROVIDER: S-EPMC4411207 | biostudies-literature | 2015 Feb

REPOSITORIES: biostudies-literature