Conductive-bridging random access memory: challenges and opportunity for 3D architecture.

ABSTRACT: The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias. However, the growth dynamics of the metallic filament in different switching materials are still debated. All CBRAM devices are switching under an operation current of 0.1 μA to 1 mA, and an operation voltage of ±2 V is also needed. The device can reach a low current of 5 pA; however, current compliance-dependent reliability is a challenging issue. Although a chalcogenide-based m

SUBMITTER: Jana D 

PROVIDER: S-EPMC4412874 | biostudies-literature | 2015

REPOSITORIES: biostudies-literature