Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography.

ABSTRACT: Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinemen

SUBMITTER: Kazemi A 

PROVIDER: S-EPMC4486951 | biostudies-literature | 2015 Jul

REPOSITORIES: biostudies-literature