Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

ABSTRACT: A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the

SUBMITTER: Zhang M 

PROVIDER: S-EPMC4493841 | biostudies-literature | 2014 Dec

REPOSITORIES: biostudies-literature