Continuous and reversible tuning of the disorder-driven superconductor-insulator transition in bilayer graphene.

ABSTRACT: The influence of static disorder on a quantum phase transition (QPT) is a fundamental issue in condensed matter physics. As a prototypical example of a disorder-tuned QPT, the superconductor-insulator transition (SIT) has been investigated intensively over the past three decades, but as yet without a general consensus on its nature. A key element is good control of disorder. Here, we present an experimental study of the SIT based on precise in-situ tuning of disorder in dual-gated bilayer graphene proximity-coupled to two superconducting electrodes through electrical and reversible control of the band gap and the charge carrier density. In the presence of a static disorder potential, Andreev-paired carriers formed close to the Fermi level in bilayer graphene constitute a randomly distribut

SUBMITTER: Lee GH 

PROVIDER: S-EPMC4550864 | biostudies-literature | 2015 Aug

REPOSITORIES: biostudies-literature