Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components.

ABSTRACT: N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 10(19) F/cm(3).The dramatically increased carrier concentration (2.85 × 10(17) cm(-3) vs ~10(14) cm(-3)) and decreased resistivity (129 Ω · cm vs ~10(6) Ω cm) indicate that the electrical properties of semi-insulating

SUBMITTER: Liu L 

PROVIDER: S-EPMC4614808 | biostudies-literature | 2015 Oct

REPOSITORIES: biostudies-literature