Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films.

ABSTRACT: Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe(1-x)Te(x) seed layer for subsequent homoepitaxial growth of superconducting FeSe(1-x)Te(x) thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least u

SUBMITTER: Molatta S 

PROVIDER: S-EPMC4637838 | biostudies-literature | 2015 Nov

REPOSITORIES: biostudies-literature