Self-Heating Effects In Polysilicon Source Gated Transistors.

ABSTRACT: Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measureme

SUBMITTER: Sporea RA 

PROVIDER: S-EPMC4650605 | biostudies-literature | 2015 Sep

REPOSITORIES: biostudies-literature