Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal.

ABSTRACT: In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal was investigated by annealing at different temperature in an H2:Ar atmosphere. Annealing at 900 °C, etching of h-BN was observed from crystal edges with no visible etching at the center of individual crystals. While, annealing at a temperature ≥ 950 °C, highly anisotropic etching was observed, where the

SUBMITTER: Sharma S 

PROVIDER: S-EPMC4650756 | biostudies-literature | 2015 May

REPOSITORIES: biostudies-literature