Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.

ABSTRACT: In-situ transmission electron microscopy (in-situ TEM) was performed to investigate the switching operation of a resistive random access memory (ReRAM) made of copper, tungsten oxide and titanium nitride (Cu/WOx/TiN). In the first Set (Forming) operation to initialize the device, precipitation appeared inside the WOx layer. It was presumed that a Cu conducting filament was formed, lowering the resistance (on-state). The Reset operation induced a higher resistance (the off-state). No change in the microstructure was identified in the TEM images. Only when an additional Reset current was applied after switching to the off-state could erasure of the filament be seen (over-Reset). Therefore, it was concluded that structural change relating to the resistance switch was localized in a very small

SUBMITTER: Arita M 

PROVIDER: S-EPMC4661473 | biostudies-literature | 2015 Nov

REPOSITORIES: biostudies-literature