Trilayer Tunnel Selectors for Memristor Memory Cells.

ABSTRACT: An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence.

SUBMITTER: Choi BJ 

PROVIDER: S-EPMC4737268 | biostudies-literature | 2016 Jan

REPOSITORIES: biostudies-literature