High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential.

ABSTRACT: In the presence of a lateral periodic potential modulation, two-dimensional electrons may exhibit interesting phenomena, such as a graphene-like energy-momentum dispersion, Bloch oscillations, or the Hofstadter butterfly band structure. To create a sufficiently strong potential modulation using conventional semiconductor heterostructures, aggressive device processing is often required, unfortunately resulting in strong disorder that masks the sought-after effects. Here, we report a novel fabrication process flow for imposing a strong lateral potential modulation onto a capacitively induced two-dimensional electron system, while preserving the host material quality. Using this process flow, the electron density in a patterned Si/SiGe heterostructure can be tuned over a wide range, from 4.4 

SUBMITTER: Lu TM 

PROVIDER: S-EPMC4750089 | biostudies-literature | 2016 Feb

REPOSITORIES: biostudies-literature