Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating.

ABSTRACT: Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe2 can be driven by a gate voltage of several volts with ap

SUBMITTER: Li Y 

PROVIDER: S-EPMC4754345 | biostudies-literature | 2016 Feb

REPOSITORIES: biostudies-literature