Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

ABSTRACT: We realize a device with biological synaptic behaviors by integrating silicon oxide (SiO(x)) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms, and represent interesting potential applications for SiO(x)-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) rel

SUBMITTER: Chang YF 

PROVIDER: S-EPMC4754682 | biostudies-literature | 2016 Feb

REPOSITORIES: biostudies-literature