Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy.

ABSTRACT: Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly for metal-oxides capable of exhibiting multiple phases as in the case of TiOx. Here, we spatially resolve and chemically characterize distinct TiOx phases in localized regions of a TiOx-based memristive device by combining full-field transmission X-ray microscopy with soft X-ray spectroscopic analysis that is performed on lamella samples. We particularly show that electrically pre-switched devices in low-resistive states comprise reduced disordered phases with O/Ti ratios around 1.37 that aggregat

SUBMITTER: Carta D 

PROVIDER: S-EPMC4759601 | biostudies-literature | 2016 Feb

REPOSITORIES: biostudies-literature